BAW56LT3G datasheet(2/4 Pages) ONSEMI

No de pièce	BAW56LT3G

Description	Dual Switching Diode Common Anode

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Fabricant	ONSEMI [ON Semiconductor]

Site Internet	http://www.onsemi.com

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BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)

Characteristic

Symbol

Min

Max

Unit

Reverse Breakdown Voltage

(I(BR) = 100 mA)

V(BR)

70

−

V

Reverse Voltage Leakage Current

(VR = 25 V, TJ = 150°C)

(VR = 70 V)

(VR = 70 V, TJ = 150°C)

IR

−

30

2.5

50

mA

Diode Capacitance

(VR = 0 V, f = 1.0 MHz)

CD

−

2.0

pF

Forward Voltage

(IF = 1.0 mA)

(IF = 10 mA)

(IF = 50 mA)

(IF = 150 mA)

VF

−

715

855

1000

1250

mV

Reverse Recovery Time

(IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1) RL = 100 W

trr

−

6.0

ns

Notes: 1. A 2.0 k

W variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V

2.0 k

820

W

0.1

mF

D.U.T.

VR

100

mH

0.1

mF

50

W OUTPUT

PULSE

GENERATOR

50

W INPUT

SAMPLING

OSCILLOSCOPE

tr

tp

t

10%

90%

IF

IR

trr

t

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

IF

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

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ON Semiconductor	BAW56LT3G	52Kb / 4P	Dual Switching Diode Common Anode January, 2007 ??Rev. 5
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Fabricant	No de pièce	Fiches technique	Description
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