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IRF630S Fiches technique(PDF) 4 Page - Vishay Siliconix |
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IRF630S Fiches technique(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com Document Number: 91032 4 S11-1047-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF630S, SiHF630S Vishay Siliconix Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 20 µs Pulse Width V DS = 50 V 101 100 10-1 VGS, Gate-to-Source Voltage (V) 56 789 10 4 25 °C 150 °C 91032_03 I D = 5.9 A V GS = 10 V 3.0 0.0 0.5 1.0 1.5 2.0 2.5 TJ, Junction Temperature (°C) 91032_04 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 1600 1200 800 0 400 100 101 VDS, Drain-to-Source Voltage (V) C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = Cgs + Cgd, Cds Shorted C rss = Cgd C oss = Cds + Cgd 91032_05 QG, Total Gate Charge (nC) 20 16 12 8 0 4 0 10 50 40 30 20 For test circuit see figure 13 91032_06 I D = 5.9 A V DS = 160 V V DS = 40 V V DS = 100 V |
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Description similaire - IRF630S |
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