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MC-4R256FKE8S-845 Fiches technique(PDF) 6 Page - Elpida Memory

No de pièce MC-4R256FKE8S-845
Description  Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
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Fabricant  ELPIDA [Elpida Memory]
Site Internet  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

MC-4R256FKE8S-845 Fiches technique(HTML) 6 Page - Elpida Memory

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Data Sheet
E0138N30 (Ver. 3.0)
6
MC-4R256FKE8S
(2/2)
Signal
I/O
Type
Description
RSCK
I
VCMOS
Serial clock input. Clock source used to read from and write to the RDRAM
control registers.
SA0
I
SVDD
Serial Presence Detect Address 0.
SA1
I
SVDD
Serial Presence Detect Address 1.
SCL
I
SVDD
Serial Presence Detect Clock.
SDA
I/O
SVDD
Serial Presence Detect Data (Open Collector I/O).
SIN
I/O
VCMOS
Serial I/O for reading from and writing to the control registers. Attaches to SIO0
of the first RDRAM on the module.
SOUT
I/O
VCMOS
Serial I/O for reading from and writing to the control registers. Attaches to SIO1
of the last RDRAM on the module.
SVDD
SPD Voltage. Used for signals SCL, SDA, SWP, SA0, SA1 and SA2.
SWP
I
SVDD
Serial Presence Detect Write Protect (active high). When low, the SPD can be
written as well as read.
VCMOS
CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT.
VDD
Supply voltage for the RDRAM core and interface logic.
VREF
Logic threshold reference voltage for RSL signals.


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