STP80N70F6 datasheet(4/13 Pages) STMICROELECTRONICS

No de pièce	STP80N70F6

Description	N-channel 68 V, 0.0063 typ., 96 A STripFET VI DeepGATE Power MOSFET in TO-220 package

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Electrical characteristics

STP80N70F6

4/13

Doc ID 023433 Rev 1

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS = 0)

ID = 250 µA

68

V

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = 68 V

1

µA

VDS = 68 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

4

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 48 A

0.0063

0.008

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

5850

pF

Coss

Output capacitance

-

341

-

pF

Crss

Reverse transfer

capacitance

240

pF

Qg

Total gate charge

VDD = 34 V, ID = 96 A,

VGS = 10 V

(see Figure 14)

99

nC

Qgs

Gate-source charge

-

31

-

nC

Qgd

Gate-drain charge

19

nC

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on delay time

Rise time

VDD = 10 V, ID = 48 A

RG =4.7 Ω VGS = 10 V

(see Figure 13)

-

23

29

-

ns

td(off)

tf

Turn-off-delay time

Fall time

-

102

23

-

ns

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