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STP80N70F6 Fiches technique(PDF) 4 Page - STMicroelectronics |
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STP80N70F6 Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 13 page Electrical characteristics STP80N70F6 4/13 Doc ID 023433 Rev 1 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage (VGS = 0) ID = 250 µA 68 V IDSS Zero gate voltage Drain current (VGS = 0) VDS = 68 V 1 µA VDS = 68 V, TC=125 °C 100 µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 4 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 48 A 0.0063 0.008 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 25 V, f = 1 MHz, VGS = 0 5850 pF Coss Output capacitance - 341 - pF Crss Reverse transfer capacitance 240 pF Qg Total gate charge VDD = 34 V, ID = 96 A, VGS = 10 V (see Figure 14) 99 nC Qgs Gate-source charge - 31 - nC Qgd Gate-drain charge 19 nC Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 10 V, ID = 48 A RG =4.7 Ω VGS = 10 V (see Figure 13) - 23 29 - ns ns td(off) tf Turn-off-delay time Fall time - 102 23 - ns ns |
Numéro de pièce similaire - STP80N70F6 |
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Description similaire - STP80N70F6 |
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