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IRF7402PBF Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRF7402PBF
Description  Generation V Technology
Download  8 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF7402PBF Fiches technique(HTML) 2 Page - International Rectifier

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IRF7402PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25°C, IS = 3.8A, VGS = 0V
trr
Reverse Recovery Time
–––
51
77
ns
TJ = 25°C, IF = 3.8A
Qrr
Reverse Recovery Charge
–––
69
100
nC
di/dt = 100A/µs
Source-Drain Ratings and Characteristics
–––
–––
––– –––
54
2.5
A
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.024 –––
V/°C Reference to 25°C, ID = 1mA
–––
0.035
VGS = 4.5V, ID = 4.1A
–––
0.050
VGS = 2.7V, ID = 3.5A
VGS(th)
Gate Threshold Voltage
0.70 ––– –––
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
6.1
––– –––
S
VDS = 10V, ID = 1.9A
–––
–––
1.0
VDS = 16V, VGS = 0V
–––
–––
25
VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
––– 100
VGS = 12V
Gate-to-Source Reverse Leakage
–––
––– -100
VGS = -12V
Qg
Total Gate Charge
–––
14
22
ID = 3.8A
Qgs
Gate-to-Source Charge
–––
2.0
3.0
nC
VDS = 16V
Qgd
Gate-to-Drain ("Miller") Charge
–––
6.3
9.5
VGS = 4.5V, See Fig. 6 and 12
td(on)
Turn-On Delay Time
–––
5.1
–––
VDD = 10V
tr
Rise Time
–––
47
–––
ID = 3.8A
td(off)
Turn-Off Delay Time
–––
24
–––
RG = 6.2Ω
tf
Fall Time
–––
32
–––
RD = 2.6Ω
Ciss
Input Capacitance
–––
650 –––
VGS = 0V
Coss
Output Capacitance
–––
300 –––
pF
VDS = 15V
Crss
Reverse Transfer Capacitance
–––
150 –––
ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width
≤ 300µs; duty cycle ≤ 2%.
ISD ≤ 3.8A, di/dt ≤ 96A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
When mounted on 1 inch square copper board, t<10 sec
This data sheet has curves & data from IRF7601


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