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RBV2500D Fiches technique(PDF) 2 Page - EIC discrete Semiconductors

No de pièce RBV2500D
Description  SILICON BRIDGE RECTIFIERS
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Fabricant  EIC [EIC discrete Semiconductors]
Site Internet  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

RBV2500D Fiches technique(HTML) 2 Page - EIC discrete Semiconductors

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RATING AND CHARACTERISTIC CURVES ( RBV2500D - RBV2510D )
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT
FORWARD SURGE CURRENT
0
25
50
75
100
125
150
175
CASE TEMPERATURE, (
°C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
FORWARD VOLTAGE, VOLTS
15
10
5
30
25
100
10
1.0
200
0
300
0
150
100
50
0.1
10
80
0.01
0.01
1.0
0.1
100
140
0
20
40
60
120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
TJ = 25
°C
Pulse Width = 300
µs
1 % Duty Cycle
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
TJ = 50
°C
TJ = 100
°C
TJ = 25
°C
20
250
10
20
60
1
2
4
6
40
100
1.2
1.4
1.8
0.4
0.6
0.8
1.0
1.6
HEAT-SINK MOUNTING, Tc
5" x 6" x 4.9" THK.
(12.8cm x 15.2cm x 12.4cm)
Al.-Finned plate


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