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FDD7N60NZTM Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDD7N60NZTM Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page ©2011 Fairchild Semiconductor Corporation FDD7N60NZ / FDU7N60NZTU Rev. C1 www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDD7N60NZTM FDD7N60NZ DPAK Tape and Reel 330 mm 16 mm 2500 units FDU7N60NZTU FDU7N60NZ IPAK Tube N/A N/A 75 units Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V, TJ = 25oC 600 - - V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25oC- 0.6 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V - - 50 μA VDS = 480 V, TC = 125oC - - 100 IGSS Gate to Body Leakage Current VGS = ±25 V, VDS = 0 V - - ±10 μA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA3.0 - 5.0 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 2.75 A - 1.05 1.25 Ω gFS Forward Transconductance VDS = 20 V, ID = 2.75 A - 7.3 - S Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz - 550 730 pF Coss Output Capacitance - 70 90 pF Crss Reverse Transfer Capacitance - 7 10 pF Qg(tot) Total Gate Charge at 10V VDS = 400 V, ID = 5.5 A, VGS = 10 V (Note 4) -13 17 nC Qgs Gate to Source Gate Charge - 3 - nC Qgd Gate to Drain “Miller” Charge - 5.6 - nC td(on) Turn-On Delay Time VDD = 250 V, ID = 5.5 A, VGS = 10 V, RG = 25 Ω (Note 4) -17.5 45 ns tr Turn-On Rise Time - 30 70 ns td(off) Turn-Off Delay Time - 40 90 ns tf Turn-Off Fall Time - 25 60 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 5.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 22 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 5.5 A - - 1.4 V trr Reverse Recovery Time VGS = 0 V, ISD = 5.5 A, dIF/dt = 100 A/μs - 250 - ns Qrr Reverse Recovery Charge - 1.4 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 23 mH, IAS = 5.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 5.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. |
Numéro de pièce similaire - FDD7N60NZTM |
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Description similaire - FDD7N60NZTM |
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