Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

FDD7N60NZTM Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce FDD7N60NZTM
Description  N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD7N60NZTM Fiches technique(HTML) 2 Page - Fairchild Semiconductor

  FDD7N60NZTM Datasheet HTML 1Page - Fairchild Semiconductor FDD7N60NZTM Datasheet HTML 2Page - Fairchild Semiconductor FDD7N60NZTM Datasheet HTML 3Page - Fairchild Semiconductor FDD7N60NZTM Datasheet HTML 4Page - Fairchild Semiconductor FDD7N60NZTM Datasheet HTML 5Page - Fairchild Semiconductor FDD7N60NZTM Datasheet HTML 6Page - Fairchild Semiconductor FDD7N60NZTM Datasheet HTML 7Page - Fairchild Semiconductor FDD7N60NZTM Datasheet HTML 8Page - Fairchild Semiconductor FDD7N60NZTM Datasheet HTML 9Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 9 page
background image
©2011 Fairchild Semiconductor Corporation
FDD7N60NZ / FDU7N60NZTU Rev. C1
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics T
C = 25
oC unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FDD7N60NZTM
FDD7N60NZ
DPAK
Tape and Reel
330 mm
16 mm
2500 units
FDU7N60NZTU
FDU7N60NZ
IPAK
Tube
N/A
N/A
75 units
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V, TJ = 25oC
600
-
-
V
ΔBVDSS
/
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, Referenced to 25oC-
0.6
-
V/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
-
-
50
μA
VDS = 480 V, TC = 125oC
-
-
100
IGSS
Gate to Body Leakage Current
VGS = ±25 V, VDS = 0 V
-
-
±10
μA
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA3.0
-
5.0
V
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 2.75 A
-
1.05
1.25
Ω
gFS
Forward Transconductance
VDS = 20 V, ID = 2.75 A
-
7.3
-
S
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1 MHz
-
550
730
pF
Coss
Output Capacitance
-
70
90
pF
Crss
Reverse Transfer Capacitance
-
7
10
pF
Qg(tot)
Total Gate Charge at 10V
VDS = 400 V, ID = 5.5 A,
VGS = 10 V
(Note 4)
-13
17
nC
Qgs
Gate to Source Gate Charge
-
3
-
nC
Qgd
Gate to Drain “Miller” Charge
-
5.6
-
nC
td(on)
Turn-On Delay Time
VDD = 250 V, ID = 5.5 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
-17.5
45
ns
tr
Turn-On Rise Time
-
30
70
ns
td(off)
Turn-Off Delay Time
-
40
90
ns
tf
Turn-Off Fall Time
-
25
60
ns
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
5.5
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
22
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 5.5 A
-
-
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, ISD = 5.5 A,
dIF/dt = 100 A/μs
-
250
-
ns
Qrr
Reverse Recovery Charge
-
1.4
-
μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 23 mH, IAS = 5.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 5.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.


Numéro de pièce similaire - FDD7N60NZTM

FabricantNo de pièceFiches techniqueDescription
logo
Inchange Semiconductor ...
FDD7N60NZ ISC-FDD7N60NZ Datasheet
331Kb / 2P
   isc N-Channel MOSFET Transistor
logo
Fairchild Semiconductor
FDD7N60NZ FAIRCHILD-FDD7N60NZ_10 Datasheet
263Kb / 9P
   N-Channel MOSFET 600V, 5.5A, 1.25?
More results

Description similaire - FDD7N60NZTM

FabricantNo de pièceFiches techniqueDescription
logo
Fairchild Semiconductor
FDPF12N60NZ FAIRCHILD-FDPF12N60NZ Datasheet
376Kb / 10P
   N-Channel UniFETTM II MOSFET 600 V, 12 A, 650 m?
FDP10N60NZ FAIRCHILD-FDP10N60NZ Datasheet
494Kb / 10P
   N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m?
FDD4N60NZ FAIRCHILD-FDD4N60NZ Datasheet
321Kb / 8P
   FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 ?
FDP7N60NZ FAIRCHILD-FDP7N60NZ Datasheet
354Kb / 10P
   N-Channel UniFETTM II MOSFET
FDD8N50NZTM FAIRCHILD-FDD8N50NZTM Datasheet
326Kb / 8P
   N-Channel UniFETTM II MOSFET?
FDPF3N50NZ FAIRCHILD-FDPF3N50NZ Datasheet
328Kb / 9P
   N-Channel UniFETTM II MOSFET?
FDPF12N50NZ FAIRCHILD-FDPF12N50NZ Datasheet
388Kb / 10P
   N-Channel UniFETTM II MOSFET?
FDPF16N50T FAIRCHILD-FDPF16N50T Datasheet
1Mb / 8P
   N-Channel UniFETTM MOSFET 500 V, 16 A, 380 m廓
FDD18N20LZ FAIRCHILD-FDD18N20LZ Datasheet
1Mb / 8P
   N-Channel UniFETTM MOSFET 200 V, 16 A, 125 m廓
FDPF51N25YDTU FAIRCHILD-FDPF51N25YDTU Datasheet
518Kb / 11P
   N-Channel UniFETTM MOSFET 250 V, 51 A, 60 m廓
More results


Html Pages

1 2 3 4 5 6 7 8 9


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com