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GP401DDS18 Fiches technique(PDF) 3 Page - Dynex Semiconductor |
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GP401DDS18 Fiches technique(HTML) 3 Page - Dynex Semiconductor |
3 / 11 page GP401DDS18 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10 www.dynexsemi.com Test Conditions V GE = 0V, VCE = VCES V GE = 0V, VCE = VCES, Tcase = 125˚C V GE = ±20V, VCE = 0V I C = 20mA, VGE = VCE V GE = 15V, IC = 400A V GE = 15V, IC = 400A, , Tcase = 125˚C DC t p = 1ms I F = 400A I F = 400A, Tcase = 125˚C V CE = 25V, VGE = 0V, f = 1MHz - Parameter Collector cut-off current Gate leakage current Gate threshold voltage Collector-emitter saturation voltage Diode forward current Diode maximum forward current Diode forward voltage Input capacitance Module inductance ELECTRICAL CHARACTERISTICS T case = 25˚C unless stated otherwise. Symbol I CES I GES V GE(TH) V CE(sat) I F I FM V F C ies L M Units mA mA µA V V V A A V V nF nH Max. 1 12 ±2 6.5 3.2 4 400 800 2.5 2.6 - - Typ. - - - 5.5 2.6 3.3 - - 2.2 2.3 45 20 Min. - - - 4.5 - - - - - - - - |
Numéro de pièce similaire - GP401DDS18 |
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Description similaire - GP401DDS18 |
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