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GP200MHS12 Fiches technique(PDF) 6 Page - Dynex Semiconductor |
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GP200MHS12 Fiches technique(HTML) 6 Page - Dynex Semiconductor |
6 / 10 page GP200MHS12 6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Fig. 9 Diode typical forward characteristics Fig. 10 Reverse bias safe operating area Fig. 7 Diode typical turn-off energy vs collector current Fig. 8 Typical switching characteristics 0 2 4 6 8 10 12 14 16 18 0 25 50 75 100 125 150 175 200 Collector current, IT - (A) Tcase = 25˚C Tcase = 125˚C VGE = ±15V VCE = 900V 0150 50 100 Collector current, IC - (A) 0 400 900 Tj = 125˚C VGE = ±15V VCE = 600V Rg = 4.7 Ω tf td(off) tr td(on) 600 500 100 300 200 700 800 200 0 50 100 150 200 250 300 350 400 0 0.5 1 1.5 2 2.5 3 3.5 Forward voltage, VF - (V) Tj = 125˚C Tj = 25˚C 1 10 100 1000 10000 1 10 100 1000 10000 Collector-emitter voltage, Vce - (V) 50 µs 100 µs IC max. (single pulse) I C max. DC (continuous) tp = 1ms |
Numéro de pièce similaire - GP200MHS12 |
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Description similaire - GP200MHS12 |
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