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GP1600FSS12 Fiches technique(PDF) 6 Page - Dynex Semiconductor |
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GP1600FSS12 Fiches technique(HTML) 6 Page - Dynex Semiconductor |
6 / 11 page GP1600FSS12 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 6/11 CURVES Fig.5 Typical output characteristics Fig.6 Typical output characteristics Fig.7 Typical turn-on energy vs collector current Fig.8 Typical turn-on energy vs collector current 0 400 800 1200 2400 2800 3200 0 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) Vge = 20/15/12/10V Common emitter Tcase = 25˚C 2000 1600 0 400 800 1200 2400 2800 3200 0 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) Vge = 20/15/12/10V Common emitter Tcase = 125˚C 2000 1600 0 50 100 150 200 250 300 350 400 0 200 400 600 800 1000 1200 1400 1600 Collector current, IC - (A) A : Rg = 7Ω B : Rg = 4.7Ω C : Rg = 3.3Ω A B C Conditions: Tcase = 25˚C, VCE = 600V, VGE = 15V 0 50 100 150 200 250 300 350 400 450 0 200 400 600 800 1000 1200 1400 1600 Collector current, IC - (A) A : Rg = 7Ω B : Rg = 4.7Ω C : Rg = 3.3Ω A B C Conditions: Tcase = 125˚C, VCE = 600V, VGE = 15V |
Numéro de pièce similaire - GP1600FSS12 |
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Description similaire - GP1600FSS12 |
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