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2SD1468S-S Fiches technique(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SD1468S-S Fiches technique(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page 2SD1468S 1A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente 26-Mar-2012 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 3 Base 1 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low Saturation Voltage Ideal for Voltage, High Current Drives. High DC Current Gain and High Current CLASSIFICATION OF hFE Product-Rank 2SD1468S-Q 2SD1468S-R 2SD1468S-S Range 120~270 180~390 270~560 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 15 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 1 A Collector Power Dissipation PC 300 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO 30 - - V IC=50µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 15 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=50µA, IC=0 Collector Cut–Off Current ICBO - - 0.5 µ A VCB=20V, IE=0 Emitter Cut–Off Current IEBO - - 0.5 µ A VEB=4V, IC=0 DC Current Gain hFE 120 - 560 VCE=3V, IC=100mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.4 V IC=500mA, IB=50mA Collector Output Capacitance Cob - - 30 pF VCB=10V, IE=0, f=1MHz Transition Frequency fT 50 - - MHz VCE=5V, IC=50mA, f=100MHz TO-92S REF. Millimeter Min. Max. A 3.90 4.10 B 3.05 3.25 C 1.42 1.62 D 15.1 15.5 E 2.97 3.27 F 0.66 0.86 G 2.44 2.64 H 1.27 REF. J 0.36 0.48 K 0.36 0.51 L 45° |
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