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SI7112DN Fiches technique(PDF) 3 Page - Vishay Siliconix |
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SI7112DN Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 12 page Document Number: 72864 S11-0855-Rev. G, 02-May-11 www.vishay.com 3 Vishay Siliconix Si7112DN This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 12 24 36 48 60 0 1234 5 VGS = 10 thru 3 V 2.5 V VDS - Drain-to-Source Voltage (V) 0.000 0.003 0.006 0.009 0.012 015 30 45 60 ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 2 4 6 8 10 0 1020304050 Qg - Total Gate Charge (nC) VDS = 15 V ID = 18.9 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 12 24 36 48 60 0.0 0.5 1.0 1.5 2.0 2.5 25 °C TC = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 500 1000 1500 2000 2500 3000 3500 06 12 18 24 30 Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 17.8 A TJ - Junction Temperature (°C) |
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