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SI7112DN Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI7112DN Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 12 page Vishay Siliconix Si7112DN Document Number: 72864 S11-0855-Rev. G, 02-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 N-Channel 30 V (D-S) Fast Switching MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Synchronous Rectification Notes: a. Surface mounted on 1" x 1" FR4 board. b. See solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. * Pb containing terminations are not RoHS compliant, exemptions apply. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 30 0.0075 at VGS = 10 V 17.8 0.0082 at VGS = 4.5 V 17.0 1 2 3 4 5 6 7 8 S S S G D D D D 3.30 mm 3.30 mm PowerPAK 1212-8 Bottom View Ordering Information: Si7112DN-T1-E3 (Lead (Pb)-free) Si7112DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) a TC = 25 °C ID 17.8 11.3 A TC = 70 °C 14.2 9.1 Pulsed Drain Current IDM 60 Continuous Source Current (Diode Conduction)a IS 3.2 1.3 Single Avalanche Current L = 0.1 mH IAS 20 Single Avalanche Energy EAS 20 mJ Maximum Power Dissipationa TC = 25 °C PD 3.8 1.5 W TC = 70 °C 2.0 0.8 Operating Junction and Storage Temperature Range TJ, Tstg - 50 to 150 °C Soldering Recommendations (Peak Temperature)b, c 260 |
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Description similaire - SI7112DN |
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