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SI7139DP Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce SI7139DP
Description  P-Channel 30-V (D-S) MOSFET
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
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SI7139DP Fiches technique(HTML) 2 Page - Vishay Siliconix

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Document Number: 65299
S09-2031-Rev. A, 05-Oct-09
Vishay Siliconix
Si7139DP
New Product
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 30
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = - 250 µA
- 19
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
5.2
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.2
- 2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 25 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
- 1
µA
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 5
On-State Drain Currenta
ID(on)
VDS ≥ - 10 V, VGS = - 10 V
- 50
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 15 A
0.0042
0.0055
Ω
VGS = - 4.5 V, ID = - 10 A
0.0074
0.0090
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 15 A
54
S
Dynamicb
Input Capacitance
Ciss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
4230
pF
Output Capacitance
Coss
695
Reverse Transfer Capacitance
Crss
670
Total Gate Charge
Qg
VDS = - 15 V, VGS = - 10 V, ID = - 10 A
97
146
nC
VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A
49.5
74.5
Gate-Source Charge
Qgs
11.7
Gate-Drain Charge
Qgd
22.6
Gate Resistance
Rg
f = 1 MHz
0.4
1.6
3.2
Ω
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 1.5 Ω
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω
17
34
ns
Rise Time
tr
12
24
Turn-Off DelayTime
td(off)
56
110
Fall Time
tf
12
24
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 1.5 Ω
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
70
140
Rise Time
tr
58
115
Turn-Off DelayTime
td(off)
47
90
Fall Time
tf
24
48
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
TC = 25 °C
- 40
A
Pulse Diode Forward Current
ISM
- 70
Body Diode Voltage
VSD
IS = - 3 A, VGS = 0 V
- 0.72
- 1.1
V
Body Diode Reverse Recovery Time
trr
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
30
60
ns
Body Diode Reverse Recovery Charge
Qrr
22
45
nC
Reverse Recovery Fall Time
ta
14
ns
Reverse Recovery Rise Time
tb
16


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