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SD103C Fiches technique(PDF) 1 Page - Diodes Incorporated |
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SD103C Fiches technique(HTML) 1 Page - Diodes Incorporated |
1 / 3 page DS11009 Rev. 11 - 2 1 of 3 SD103A - SD103C SD103A - SD103C SCHOTTKY BARRIER DIODE Features · Low Forward Voltage Drop · Guard Ring Construction for Transient Protection · Low Reverse Recovery Time · Low Reverse Capacitance · Case: DO-35, Glass · Leads: Solderable per MIL-STD-202, Method 208 · Marking: Type Number · Polarity: Cathode Band · Weight: 0.13 grams (approx.) Mechanical Data Maximum Ratings @ TA = 25°C unless otherwise specified Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol SD103A SD103B SD103C Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 30 20 V RMS Reverse Voltage VR(RMS) 28 21 14 V Forward Continuous Current IFM 350 mA Repetitive Peak Forward Current @ t £ 1.0s IFRM 1.0 A Non-Repetitive Peak Forward Surge Current 8.3 ms Half Sine Wave IFSM 15 A Power Dissipation Pd 400 mW Thermal Resistance, Junction to Ambient Air RqJA 300 K/W Operating Junction Temeperature Tj 125 °C Storage Temperature Range TSTG -55 to +150 °C Characteristic Symbol Min Typ MaxUnit Test Condition Reverse Breakdown Voltage SD103A SD103B SD103C V(BR)R 40 30 20 ¾¾ V IRS = 100mA (pulsed) Maximum Forward Voltage Drop VFM ¾¾ 0.37 0.60 V IF = 20mA IF = 200mA Maximum Peak Reverse Current SD103A SD103B SD103C IRM ¾¾ 5.0 mA VR = 30V VR = 20V VR = 10V Junction Capacitance Cj ¾ 50 ¾ pF VR = 0V, f = 1.0MHz Reverse Recovery Time trr ¾ 10 ¾ ns IF = IR = 50mA to 200mA, Irr = 0.1 x IR,RL = 100W A A B C D DO-35 Dim Min Max A 25.40 ¾ B ¾ 4.00 C ¾ 0.60 D ¾ 2.00 All Dimensions in mm |
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