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MTB04N03J3 Fiches technique(PDF) 1 Page - Cystech Electonics Corp. |
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MTB04N03J3 Fiches technique(HTML) 1 Page - Cystech Electonics Corp. |
1 / 11 page CYStech Electronics Corp. Spec. No. : C789J3 Issued Date : 2011.12.12 Revised Date : 2013.12.26 Page No. : 1/11 MTB04N03J3 CYStek Product Specification N-Channel Enhancement Mode Power MOSFET MTB04N03J3 BVDSS 30V ID 75A RDS(ON)@VGS=10V, ID=30A 3.1mΩ(typ) RDS(ON)@VGS=4.5V, ID=24A 4.7mΩ(typ) Features • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plating and halogen-free package Symbol Outline Ordering Information Device Package Shipping MTB04N03J3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel MTB04N03J3 TO-252(DPAK) G:Gate G D S D:Drain S:Source Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name |
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