2SD1892 datasheet(2/3 Pages) SAVANTIC

No de pièce	2SD1892

Description	Silicon NPN Power Transistors

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Fabricant	SAVANTIC [Savantic, Inc.]

Site Internet	http://www.svntc.com

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SavantIC Semiconductor

Product Specification

2

Silicon NPN Power Transistors

2SD1892

CHARACTERISTICS

Tj=25

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=30mA ; IB=0

100

V

VCEsat

Collector-emitter saturation voltage

IC=4A ;IB=4mA

2.5

V

VBEsat

Base-emitter saturation voltage

IC=4A ;IB=4mA

3.0

V

ICBO

Collector cut-off current

VCB=120V; IE=0

100

µA

ICEO

Collector cut-off current

VCE=100V; IB=0

100

µA

IEBO

Emitter cut-off current

VEB=5V; IC=0

100

µA

hFE-1

DC current gain

IC=1A ; VCE=5V

2000

hFE -2

DC current gain

IC=4A ; VCE=5V

5000

30000

fT

Transition frequency

IC=0.5A ; VCE=10V;f=1MHz

20

MHz

Switching times

ton

Turn-on time

2.5

µs

ts

Storage time

3.5

µs

tf

Fall time

IC=4A; VCC=50V

IB1=-IB2=4mA

1.0

µs

hFE-2 Classifications

Q

P

5000-15000

8000-30000

Numéro de pièce similaire - 2SD1892

Fabricant	No de pièce	Fiches technique	Description
Panasonic Semiconductor	2SD1892	75Kb / 3P	Silicon PNP epitaxial planar type Darlington(For power amplification)
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Savantic, Inc.	2SD1892	126Kb / 3P	Silicon NPN Power Transistors
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