IRLR110ATF datasheet(2/9 Pages) FAIRCHILD

No de pièce	IRLR110ATF

Description	$GYDQFHG 3RZHU 026)(7

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

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IRLR/U110A

100

--

1.0

--

0.1

--

50

20

8

10

17

8

5.5

0.9

3.5

--

2.0

100

-100

10

100

0.44

--

235

65

25

30

45

25

8

--

3.2

180

--

85

0.23

4.7

16

1.5

--

Notes;

(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

(2) L=4mH, I

AS=4.7A, VDD=25V, RG=27Ω, Starting TJ =25°C

(3) I

SD ≤ 5.6A, di/dt ≤ 250A/µs, VDD ≤ BVDSS , Starting TJ =25°C

(4) Pulse Test: Pulse Width = 250

µs, Duty Cycle ≤ 2%

(5) Essentially Independent of Operating Temperature

2

1&+$11(/

32:(5 026)(7

Electrical Characteristics (T

C=25°C unless otherwise specified)

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

Characteristic

Symbol

Max. Units

Typ.

Min.

Test Condition

Static Drain-Source

On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain ( Miller ) Charge

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

BVDSS

∆BV/∆T

J

VGS(th)

RDS(on)

IGSS

IDSS

V

V/

°C

V

nA

µA

Ω

pF

ns

nC

--

VGS=0V,ID=250µA

ID=250µA

See Fig 7

VDS=5V,ID=250µA

VGS=20V

VGS=-20V

VDS=100V

VDS=80V,TC=125°C

VGS=5V,ID=2.35A

(4)

VDS=40V,ID=2.35A

(4)

VDD=50V,ID=5.6A,

RG=12Ω

See Fig 13

(4) (5)

VDS=80V,VGS=5V,

ID=5.6A

See Fig 6 & Fig 12 (4) (5)

Drain-to-Source Leakage Current

VGS=0V,VDS=25V,f =1MHz

See Fig 5

Source-Drain Diode Ratings and Characteristics

Continuous Source Current

Pulsed-Source Current

(1)

Diode Forward Voltage

(4)

Reverse Recovery Time

Reverse Recovery Charge

IS

ISM

VSD

trr

Qrr

Characteristic

Symbol

Max. Units

Typ.

Min.

Test Condition

--

A

V

ns

µC

Integral reverse pn-diode

in the MOSFET

TJ=25°C,IS=4.7A,VGS=0V

TJ=25°C,IF=5.6A

diF/dt=100A/µs

(4)

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