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IRF2807ZLPBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRF2807ZLPBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 12 page 07/22/10 www.irf.com 1 HEXFET® is a registered trademark of International Rectifier. IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF HEXFET® Power MOSFET S D G VDSS = 75V RDS(on) = 9.4mΩ ID = 75A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. D2Pak IRF2807ZSPbF TO-220AB IRF2807ZPbF TO-262 IRF2807ZLPbF Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited) d mJ EAS (tested) Single Pulse Avalanche Energy Tested Value i IAR Avalanche Current c A EAR Repetitive Avalanche Energy h mJ TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.90 °C/W RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient (PCB Mount, steady state) j ––– 40 Max. 89 63 350 75 10 lbf•in (1.1N•m) 170 1.1 ± 20 160 200 See Fig.12a,12b,15,16 300 (1.6mm from case ) -55 to + 175 PD - 95488A |
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