SI4384DY datasheet(3/9 Pages) VISHAY

No de pièce	SI4384DY

Description	N-Channel Reduced Qg, Fast Switching MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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3 / 9 page

Document Number: 72645

S09-0226-Rev. C, 09-Feb09

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3

Vishay Siliconix

Si4384DY

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.000

0.004

0.008

0.012

0.016

0.020

0

1020304050

VGS = 10 V

ID - Drain Current (A)

VGS = 4.5 V

0

1

2

3

4

5

6

0369

12

15

VDS = 15 V

ID = 15 A

Qg - Total Gate Charge (nC)

1.0

1.2

1

10

60

0.00

0.2

0.4

0.6

0.8

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

440

880

1320

1760

2200

0

4

8

12

16

20

Crss

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

VGS = 10 V

ID = 15 A

TJ - Junction Temperature (°C)

0.000

0.006

0.012

0.018

0.024

0.030

02468

10

ID = 15 A

VGS - Gate-to-Source Voltage (V)

Numéro de pièce similaire - SI4384DY

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI4386DY	182Kb / 8P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. D, 09-Feb-09
	SI4386DY	172Kb / 8P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. D, 09-Feb-09
	SI4386DY	170Kb / 8P	N-Channel Reduced Qg, Fast Switching MOSFET 01-Jan-2022
	SI4386DY	172Kb / 8P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. D, 09-Feb-09
	SI4386DY	170Kb / 8P	N-Channel Reduced Qg, Fast Switching MOSFET 01-Jan-2022

More results

Description similaire - SI4384DY

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI7860DP-T1	147Kb / 7P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. E, 09-Feb-09
	SI4872DY	57Kb / 4P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. A, 17-Jul-00
	SI4850EY	61Kb / 4P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. D, 29-Mar-04
	SI6802DQ	59Kb / 4P	N-Channel, Reduced Qg, Fast Switching MOSFET Rev. C, 18-Dec-96
DinTek Semiconductor Co...	DTB6035	235Kb / 6P	N-Channel Reduced Qg, Fast Switching MOSFET
Vishay Siliconix	SI4800BDY	252Kb / 9P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. H, 29-Dec-08
	SI4398DY	104Kb / 6P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. C, 14-Feb-11
	SI4800BDY	185Kb / 8P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. H, 29-Dec-08
	SI7384DP	96Kb / 6P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. C, 03-Mar-08
	SI4800BDY-T1	252Kb / 9P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. H, 29-Dec-08
	SI9422DY	53Kb / 4P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. D, 23-Nov-98

More results

SI4384DY Fiches technique(PDF) 3 Page - Vishay Siliconix

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