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FQPF6N80C Fiches technique(PDF) 3 Page - Fairchild Semiconductor |
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FQPF6N80C Fiches technique(HTML) 3 Page - Fairchild Semiconductor |
3 / 10 page ©2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1 www.fairchildsemi.com 3 ! 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150℃ ※ Notes : 1. V GS = 0V 2. 250μ s Pulse Test 25℃ V SD, Source-Drain voltage [V] 0 5 10 15 20 25 0 2 4 6 8 10 12 V DS = 400V V DS = 160V V DS = 640V ※ Note : I D = 6.0A Q G, Total Gate Charge [nC] 6 03 9 12 1 2 3 4 5 6 V GS = 20V V GS = 10V ※ Note : T J = 25 ℃ I D, Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics 10 -1 0 10 1 10 -2 10 -1 10 0 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ※ Notes : 1. 250μ s Pulse Test 2. T C = 25 ℃ 10 V DS, Drain-Source Voltage [V] 24 8 10 10 -1 10 0 10 1 150 oC 25 oC -55 oC ※ Notes : 1. V DS = 50V 2. 250μ s Pulse Test 6 V GS, Gate-Source Voltage [V] 10 -1 0 10 1 0 300 600 900 1200 1500 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss 10 V DS, Drain-Source Voltage [V] |
Numéro de pièce similaire - FQPF6N80C |
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Description similaire - FQPF6N80C |
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