J112 datasheet(2/6 Pages) FAIRCHILD

No de pièce	J112

Description	This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

Site Internet	http://www.fairchildsemi.com

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J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113

Rev. B0

2

Electrical Characteristics T

a = 25°C unless otherwise noted

* Pulse Test: Pulse Width

 300s, Duty Cycle  3.0%

Typical Performance Characteristics

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Off Characteristics

BV(BR)GSS Gate-Source Breakdown Voltage IG = -1.0A, VDS = 0

-35

V

IGSS

Gate Reverse Current

VGS = -15V, VDS = 0

-1.0

nA

VGS(off)

Gate-Source Cutoff Voltage

VDS = 5.0V, ID = 1.0A

111

112

MMBFJ112_SB51338

113

-3.0

-1.0

-3.0

-0.5

-10

-5.0

-3.0

V

ID(off)

Drain Cutoff Leakage Current

VDS = 5.0V, VGS = -10V

1.0

nA

On Characteristics

IDSS

Zero-Gate Voltage Drain

Current*

VDS = 15V, IGS = 0

111

112

113

20

5.0

2.0

mA

rDS(on)

Drain-Source On Resistance

VDS  0.1V, VGS = 0

111

112

113

30

50

100



Small Signal Characteristics

Cdg(on)

Csg(on)

Drain Gate & Source Gate On

Capacitance

VDS = 0, VGS = 0, f = 1.0MHz

28

pF

Cdg(off)

Drain-Gate Off Capacitance

VDS = 0, VGS = -10V, f = 1.0MHz

5.0

pF

Csg(off)

Source-Gate Off Capacitance

VDS = 0, VGS = -10V, f = 1.0MHz

5.0

pF

Parameter Interactions

0.5

1

2

5

10

5

10

20

50

100

5

10

20

50

100

V

- GATE CUTOFF VOLTAGE (V)

GS (OFF)

I

, g

@ V

= 15V,

V

= 0 PULSED

r

@ 1.0 mA, V

= 0

V

@ V

= 15V,

I

= 1.0 nA

GS(off)

DSS

r

D

I

DSS

DS

GS

DS

GS

fs

DS

g

fs

_

Common Drain-Source

0

0.4

0.8

1.2

1.6

2

0

2

4

6

8

10

V

- DRAIN-SOURCE VOLTAGE (V)

DS

- 0.4 V

- 1.0 V

- 0.8 V

- 0.2 V

- 0.6 V

V

= 0 V

GS

T = 25°C

TYP V

= - 2.0 V

GS(off)

A

- 1.2 V

- 1.4 V

Numéro de pièce similaire - J112

Fabricant	No de pièce	Fiches technique	Description
Motorola, Inc	J112	110Kb / 4P	JFET Chopper Transistor (N-Channel- Depletion)
ON Semiconductor	J112	90Kb / 5P	JFET Chopper Transistors N.Channel . Depletion March, 2006 ??Rev. 2
ON Semiconductor	J112	110Kb / 4P	JFET Chopper Transistor 1997
Vishay Siliconix	J112	58Kb / 6P	N-Channel JFETs Rev. E, 04-Jun-01
NXP Semiconductors	J112	35Kb / 6P	N-channel silicon field-effect transistors July 1993

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