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IRF7756TRPBF Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRF7756TRPBF
Description  Ultra Low On-Resistance
Download  9 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF7756TRPBF Fiches technique(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
05/14/09
IRF7756PbF
Absolute Maximum Ratings
www.irf.com
1
Thermal Resistance
Parameter
Max.
Units
VDS
Drain-Source Voltage
-12
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
-4.3
ID @ TA = 70°C
Continuous Drain Current, VGS @ -4.5V
-3.5
A
IDM
Pulsed Drain Current

-17
PD @TA = 25°C
Maximum Power Dissipation
ƒ
1.0
W
PD @TA = 70°C
Maximum Power Dissipation
ƒ
0.64
W
Linear Derating Factor
8.0
mW/°C
VGS
Gate-to-Source Voltage
±8.0
V
TJ , TSTG
Junction and Storage Temperature Range
-55 to +150
°C
VDSS
RDS(on) max
ID
-12V
0.040@VGS = -4.5V
±
4.3A
0.058@VGS = -2.5V
±
3.4A
0.087@VGS = -1.8V
±
2.2A
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
125
°C/W
TSSOP-8
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
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l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
l Lead-Free
PD-96017A


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