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IRF4410 Fiches technique(PDF) 2 Page - Nell Semiconductor Co., Ltd

No de pièce IRF4410
Description  N-Channel Power MOSFET
Download  9 Pages
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Fabricant  NELLSEMI [Nell Semiconductor Co., Ltd]
Site Internet  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

IRF4410 Fiches technique(HTML) 2 Page - Nell Semiconductor Co., Ltd

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SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
UNIT
Min.
0.65
62
THERMAL RESISTANCE
PARAMETER
Thermal resistance, junction to case
SYMBOL
Rth(j-c)
Typ.
Max.
ºC/W
40
Thermal resistance, junction to ambient
Rth(j-a)
UNIT
V
ns
μA
pF
nC
57
Max.
140
100
100
7.2
-100
100
0.12
4820
170
16
52
43
340
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
C
I = 250µA ,
D
V
= 0V
GS
TEST CONDITIONS
I = 5mA,
D
V
=V
DS
GS
V
=100V, V
=0V
DS
GS
T = 25°C
C
Fall time
Gate to source reverse leakage current
Input capacitance
Total gate charge
Output capacitance
PARAMETER
Rise time
Gate to source forward leakage current
Turn-on delay time
Reverse transfer capacitance
Breakdown voltage temperature coefficient
Drain to source breakdown voltage
Turn-off delay time
SYMBOL
CISS
V
/
(BR)DSS
TJ
V(BR)DSS
IGSS
QG
tr
tf
QGS
Gate to source charge
V
= 50V, V
= 10V, I = 58A
DD
GS
D
(Note 1, 2)
Drain to source leakage current
IDSS
COSS
CRSS
td(ON)
td(OFF)
V/ºC
S
nA
T =125°C
C
Typ.
Min.
9.0
10
120
V
= 65V, V
DD
(Note 1
)
= 10V, l = 58A,
GS
D
R
= 2.7
GS
Ω
, 2
V
= 50V, V
= 0V, f =1MHz
DS
GS
V
= -20V, V
= 0V
GS
DS
V
= 20V, V
= 0V
GS
DS
I =58A, V
=10V
D
DS
Forward transconductance
Static drain to source on-state resistance
RDS(ON)
gfs
I = 58A, V
= 10V
D
GS
Gate to drain charge (Miller charge)
QGD
V
=80V, V
=0V
DS
GS
2.0
V
4.0
V
=V
, I =150μA
GS
DS
D
Gate threshold voltage
VGS(TH)
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)
C
UNIT
Max.
TEST CONDITIONS
PARAMETER
SYMBOL
Typ.
Min.
V
I
= 58A, V
= 0V
SD
GS
Diode forward voltage
VSD
1.3
Integral reverse P-N junction
diode in the MOSFET
Continuous source to drain current
Is (IsD)
97
D (Drain)
G
(Gate)
S (Source)
A
Pulsed source current
ISM
390
I
= 58A, V = 85V,
SD
R
dI /dt = 100A/µs
F
Reverse recovery time
trr
ns
38
nC
Reverse recovery charge
Qrr
53
Note: 1. Pulse test: Pulse width ≤ 400μs, duty cycle ≤ 2%
.
2. Essentially independent of operating temperature.
tON
Forward turn-on time
60
80
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
TO-220AB
2
TO-263(D PAK)
RG
Internal gate resistance
0.7
Ω
19
27
83
IRF4410 Series
www.nellsemi.com
Page 2 of 9


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