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IRF4410 Fiches technique(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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IRF4410 Fiches technique(HTML) 2 Page - Nell Semiconductor Co., Ltd |
2 / 9 page SEMICONDUCTOR RoHS RoHS Nell High Power Products UNIT Min. 0.65 62 THERMAL RESISTANCE PARAMETER Thermal resistance, junction to case SYMBOL Rth(j-c) Typ. Max. ºC/W 40 Thermal resistance, junction to ambient Rth(j-a) UNIT V ns μA pF nC 57 Max. 140 100 100 7.2 -100 100 0.12 4820 170 16 52 43 340 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) C I = 250µA , D V = 0V GS TEST CONDITIONS I = 5mA, D V =V DS GS V =100V, V =0V DS GS T = 25°C C Fall time Gate to source reverse leakage current Input capacitance Total gate charge Output capacitance PARAMETER Rise time Gate to source forward leakage current Turn-on delay time Reverse transfer capacitance Breakdown voltage temperature coefficient Drain to source breakdown voltage Turn-off delay time SYMBOL CISS ▲ ▲ V / (BR)DSS TJ V(BR)DSS IGSS QG tr tf QGS Gate to source charge V = 50V, V = 10V, I = 58A DD GS D (Note 1, 2) Drain to source leakage current IDSS COSS CRSS td(ON) td(OFF) V/ºC mΩ S nA T =125°C C Typ. Min. 9.0 10 120 V = 65V, V DD (Note 1 ) = 10V, l = 58A, GS D R = 2.7 GS Ω , 2 V = 50V, V = 0V, f =1MHz DS GS V = -20V, V = 0V GS DS V = 20V, V = 0V GS DS I =58A, V =10V D DS Forward transconductance Static drain to source on-state resistance RDS(ON) gfs I = 58A, V = 10V D GS Gate to drain charge (Miller charge) QGD V =80V, V =0V DS GS 2.0 V 4.0 V =V , I =150μA GS DS D Gate threshold voltage VGS(TH) SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified) C UNIT Max. TEST CONDITIONS PARAMETER SYMBOL Typ. Min. V I = 58A, V = 0V SD GS Diode forward voltage VSD 1.3 Integral reverse P-N junction diode in the MOSFET Continuous source to drain current Is (IsD) 97 D (Drain) G (Gate) S (Source) A Pulsed source current ISM 390 I = 58A, V = 85V, SD R dI /dt = 100A/µs F Reverse recovery time trr ns 38 nC Reverse recovery charge Qrr 53 Note: 1. Pulse test: Pulse width ≤ 400μs, duty cycle ≤ 2% . 2. Essentially independent of operating temperature. tON Forward turn-on time 60 80 Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD) TO-220AB 2 TO-263(D PAK) RG Internal gate resistance 0.7 Ω 19 27 83 IRF4410 Series www.nellsemi.com Page 2 of 9 |
Numéro de pièce similaire - IRF4410 |
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Description similaire - IRF4410 |
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