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UF3N25Z Fiches technique(PDF) 2 Page - Unisonic Technologies |
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UF3N25Z Fiches technique(HTML) 2 Page - Unisonic Technologies |
2 / 3 page UF3N25Z Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-760.D ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 250 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current Continuous ID 3 A Pulsed IDM 12 A Avalanche Energy EAS 52 mJ Power Dissipation SOT-223 PD 0.8 W TO-251/TO-252 1.14 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 250 V Drain-Source Leakage Current IDSS VDS=250V 1 µA Gate-Source Leakage Current Forward IGSS VGS=+20V, VDS=0V 10 µA Reverse VGS=-20V, VDS=0V -10 µA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) ID=250µA 2 4 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3A 1.7 Ω DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1MHz 190 pF Output Capacitance COSS 80 pF Reverse Transfer Capacitance CRSS 30 pF SWITCHING PARAMETERS Total Gate Charge QG VDD=50V, ID=3A, IG=100µA, VGS=10V 3.2 nC Gate to Source Charge QGS 0.64 nC Gate to Drain Charge QGD 1.6 nC Turn-ON Delay Time tD(ON) VDD=30V, ID=1A, RG=25 Ω, VGS=0~10V 20 ns Rise Time tR 90 ns Turn-OFF Delay Time tD(OFF) 30 ns Fall-Time tF 50 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 3 A Maximum Body-Diode Pulsed Current ISM 12 A Drain-Source Diode Forward Voltage VSD IS=3A 1.3 V |
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