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SI-3033KD Fiches technique(PDF) 3 Page - Sanken electric

No de pièce SI-3033KD
Description  Surface-Mount, Low Current Consumption, Low Dropout Voltage
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Fabricant  SANKEN [Sanken electric]
Site Internet  http://www.sanken-ele.co.jp/en
Logo SANKEN - Sanken electric

SI-3033KD Fiches technique(HTML) 3 Page - Sanken electric

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76
ICs
1-1-4 Linear Regulator ICs
■Reference Data
•A higher heat radiation effect can be achieved by enlarging the copper laminate
area connected to the inner frame to which a monolithic ICs is mounted.
• Obtaining the junction temperature
Measure the case temperature TC with a thermocouple, etc. Then, substitute
this value in the following formula to obtain the junction temperature.
Tj=PD × θj–C + TC ( θj–C = 3°C/W) PD= (VIN–VO)•IOUT
Copper Laminate Area (on Glass-Epoxy Board) vs.
Thermal Resistance (from Junction to Ambient Temperature) (Typical Value)
55
50
45
40
35
30
0
200
400
600
800
1000
Copper Laminate Area (mm2)
1200
1400
1600
1800
When Using Glass-Epoxy Board of 40 × 40 mm
■Block Diagram
●SI-3010KD/SI-3012KD
●SI-3033KD/SI-3050KD
2
VIN
1
REF
VC
VO
ADJ
GND
5
3
4
TSD
-
+
2
VIN
1
REF
VC
Vo
Sense
GND
5
3
4
TSD
-
+
■Typical Connection Diagram
●SI-3033KD/SI-3050KD
●SI-3010KD/SI-3012KD
GND
3
VIN
CIN
2
VO
CO
4
VC
1
sense
5
+
+
D1*2
*1
Load
GND
3
VIN
CIN
R1
R2
2
VO
4
VC
1
ADJ
5
+
D1*2
CO
+
*1
R3
*3
Load
CIN:Input capacitor (22 µF or larger)
CO: Output capacitor
*1: SI-3012KD/3033KD (22 µF or larger)
Co has to be a low ESR capacitor such as a ceramic capacitor.
When using the electrolytic capacitor, oscillation may occur at a low temperature.
SI-3010KD/3050KD/ (47 µF or larger)
If a low ESR capacitor is used, oscillation may occur.
*2: D1: Reverse bias protection diode
This diode is required for protection against reverse biasing between the input
and output.
(Sanken SJPL-H2 is recommended.)
This diode is not required at VO ≤ 3.3V.
R1, R2: Output voltage setting resistors
The output voltage can be set by connecting R1 and R2 as shown
above.
The recommended value for R2 is 10Ω (24kΩ for SI-3012KD).
R1=(VO–VADJ)÷(VADJ/R2)
*3: For SI-3010KD, insert R3 in case of setting VO to VO ≤ 1.5V.
The recommended value for R3 is 10kΩ.


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