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Si4737 Fiches technique(PDF) 5 Page - Silicon Laboratories |
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Si4737 Fiches technique(HTML) 5 Page - Silicon Laboratories |
5 / 24 page Si473x-B20 Rev. 0.5 5 Table 2. Absolute Maximum Ratings1,2 Parameter Symbol Value Unit Supply Voltage VDD –0.5 to 5.8 V Interface Supply Voltage VIO –0.5 to 3.9 V Input Current3 IIN 10 mA Input Voltage3 VIN –0.3 to (VIO + 0.3) V Operating Temperature TOP –40 to 95 C Storage Temperature TSTG –55 to 150 C RF Input Level4 0.4 VPK Notes: 1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond recommended operating conditions for extended periods may affect device reliability. 2. The Si473x devices are high-performance RF integrated circuits with certain pins having an ESD rating of < 2 kV HBM. Handling and assembly of these devices should only be done at ESD-protected workstations. 3. For input pins SCLK, SEN, SDIO, RST, RCLK, DCLK, DFS, GPO1, GPO2, and GPO3. 4. At RF input pins, FMI and AMI. |
Numéro de pièce similaire - Si4737 |
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Description similaire - Si4737 |
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