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SI7108DN Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce SI7108DN
Description  N-Channel 20-V (D-S) Fast Switching MOSFET
Download  12 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7108DN Fiches technique(HTML) 2 Page - Vishay Siliconix

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Document Number: 73216
S-80581-Rev. E, 17-Mar-08
Vishay Siliconix
Si7108DN
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
12
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 16 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
µA
VDS = 20 V, VGS = 0 V, TJ = 55 °C
5
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
40
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 22 A
0.0041
0.0049
Ω
VGS = 4.5 V, ID = 19.7 A
0.005
0.0061
Forward Transconductancea
gfs
VDS = 15 V, ID = 22 A
88
S
Diode Forward Voltagea
VSD
IS = 3.2 A, VGS = 0 V
0.75
1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V, ID = 22 A
20
30
nC
Gate-Source Charge
Qgs
6.3
Gate-Drain Charge
Qgd
4.9
Gate Resistance
Rg
f = 1 MHz
0.7
1.4
2.1
Ω
Turn-On Delay Time
td(on)
VDD = 20 V, RL = 20 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
10
15
ns
Rise Time
tr
10
15
Turn-Off Delay Time
td(off)
60
130
Fall Time
tf
10
15
Source-Drain Reverse Recovery Time
trr
IF = 3.2 A, di/dt = 100 A/µs
30
60
Reverse Recovery Charge
Qrr
20
36
nC
Output Characteristics
0
10
20
30
40
50
60
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS = 10 thru 4 V
3 V
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25 °C
TC = 125 °C
- 55 °C
VGS - Gate-to-Source Voltage (V)


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