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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF8721GPBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRF8721GPBF Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF8721GPbF 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 6.9 8.5 m Ω ––– 10.6 12.5 VGS(th) Gate Threshold Voltage 1.35 ––– 2.35 V ∆VGS(th) Gate Threshold Voltage Coefficient ––– -6.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 27 ––– ––– S Qg Total Gate Charge ––– 8.3 12 Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.0 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.0 ––– nC Qgd Gate-to-Drain Charge ––– 3.2 ––– Qgodr Gate Charge Overdrive ––– 2.0 ––– See Fig. 16a and 16b Qsw Switch Charge (Qgs2 + Qgd) ––– 4.2 ––– Qoss Output Charge ––– 5.0 ––– nC RG Gate Resistance ––– 1.8 3.0 Ω td(on) Turn-On Delay Time ––– 8.2 ––– tr Rise Time ––– 11 ––– td(off) Turn-Off Delay Time ––– 8.1 ––– ns tf Fall Time ––– 7.0 ––– Ciss Input Capacitance ––– 1040 ––– Coss Output Capacitance ––– 229 ––– pF Crss Reverse Transfer Capacitance ––– 114 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 3.1 (Body Diode) A ISM Pulsed Source Current ––– ––– 112 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 14 21 ns Qrr Reverse Recovery Charge ––– 15 23 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions See Fig. 15a Max. 68 11 ƒ = 1.0MHz Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 14A e MOSFET symbol VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 11A VDS = 15V VGS = 20V VGS = -20V VDS = 24V, VGS = 0V TJ = 25°C, IF = 11A, VDD = 15V di/dt = 300A/µs e TJ = 25°C, IS = 11A, VGS = 0V e showing the integral reverse p-n junction diode. VGS = 4.5V, ID = 11A e VGS = 4.5V Typ. ––– VDS = VGS, ID = 25µA RG = 1.8Ω VDS = 15V, ID = 11A VDS = 24V, VGS = 0V, TJ = 125°C ––– ID = 11A VGS = 0V VDS = 15V |
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