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IRF8302MPBF Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRF8302MPBF
Description  HEXFET Power MOSFET plus Schottky Diode
Download  9 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF8302MPBF Fiches technique(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET plus Schottky Diode
‚
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.83mH, RG = 25Ω, IAS = 25A.
Notes:
DirectFET
™ ISOMETRIC
MX
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF8302MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8302MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF8302MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
l RoHs Compliant and Halogen-Free

l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible

l Ultra Low Package Inductance
l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter

l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques

l 100% Rg tested
0
2
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
0
1
2
3
4
5
6
ID = 31A
TJ = 25°C
TJ = 125°C
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.4m
Ω@ 10V 2.2mΩ@ 4.5V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
25
Max.
25
190
250
±20
30
31
260
0
102030405060708090 100
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VDS= 24V
VDS= 15V
VDS= 6.0V
ID= 25A
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
35nC
8.9nC
5.1nC
40nC
29nC
1.8V
IRF8302MPbF
1
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
February 17, 2014
Orderable Part Number
Form
Quantity
IRF8302MPbF
DirectFET MX
Tape and Reel
4800
IRF8302MTRPbF
Base Part number
Package Type
Standard Pack


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