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IRF6674PBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRF6674PBF Fiches technique(HTML) 2 Page - International Rectifier |
2 / 9 page IRF6674TRPbF 2 www.irf.com S D G Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. Electrical Characteristic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 60 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.07 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 9.0 11 m Ω VGS(th) Gate Threshold Voltage 3.0 4.0 4.9 V ΔVGS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 16 ––– ––– S Qg Total Gate Charge ––– 24 36 Qgs1 Pre-Vth Gate-to-Source Charge ––– 5.4 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.9 ––– nC Qgd Gate-to-Drain Charge ––– 8.3 12 Qgodr Gate Charge Overdrive ––– 8.4 ––– See Fig. 15 Qsw Switch Charge (Qgs2 + Qgd) ––– 10.2 ––– Qoss Output Charge ––– 14 ––– nC RG Gate Resistance ––– 1.0 ––– Ω td(on) Turn-On Delay Time ––– 7.0 ––– tr Rise Time ––– 12 ––– td(off) Turn-Off Delay Time ––– 12 ––– ns tf Fall Time ––– 8.7 ––– Ciss Input Capacitance ––– 1350 ––– Coss Output Capacitance ––– 390 ––– pF Crss Reverse Transfer Capacitance ––– 105 ––– Coss Output Capacitance ––– 1580 ––– Coss Output Capacitance ––– 290 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 67 (Body Diode) TJ= 25°C A ISM Pulsed Source Current ––– ––– 134 (Body Diode) g VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 32 48 ns Qrr Reverse Recovery Charge ––– 36 54 nC MOSFET symbol RG = 6.2 Ω VDS = 25V Conditions VGS = 0V, VDS = 48V, f=1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VDS = 16V, VGS = 0V VDD = 30V, VGS = 10V i VGS = 0V ƒ = 1.0MHz ID = 13.4A VDS = VGS, ID = 100μA VDS = 60V, VGS = 0V Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 13.4A i TJ = 25°C, IF = 13.4A, VDD = 50V di/dt = 100A/μs c TJ = 25°C, IS = 13.4A, VGS = 0V i showing the integral reverse p-n junction diode. ID = 13.4A VDS = 48V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 10V VDS = 25V, ID = 13.4A VDS = 30V |
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