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FQA10N80C-F109 Datasheet(Fiches technique) 6 Page - Fairchild Semiconductor

Numéro de pièce FQA10N80C-F109
Description  FQA10N80C_F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω
Télécharger  8 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQA10N80C-F109 Datasheet(HTML) 6 Page - Fairchild Semiconductor

  FQA10N80C-F109 Datenblatt HTML 1Page - Fairchild Semiconductor FQA10N80C-F109 Datenblatt HTML 2Page - Fairchild Semiconductor FQA10N80C-F109 Datenblatt HTML 3Page - Fairchild Semiconductor FQA10N80C-F109 Datenblatt HTML 4Page - Fairchild Semiconductor FQA10N80C-F109 Datenblatt HTML 5Page - Fairchild Semiconductor FQA10N80C-F109 Datasheet HTML 6Page - Fairchild Semiconductor FQA10N80C-F109 Datenblatt HTML 7Page - Fairchild Semiconductor FQA10N80C-F109 Datenblatt HTML 8Page - Fairchild Semiconductor  
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©2006 Fairchild Semiconductor Corporation
FQA10N80C_F109 Rev. C1
www.fairchildsemi.com
6
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RG
Same Type
as DUT
VGS
• dv/dt controlled by R
G
•I
SD controlled by pulse period
VDD
L
I SD
10V
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
I
FM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RG
Same Type
as DUT
VGS
• dv/dt controlled by R
G
•I
SD controlled by pulse period
VDD
LL
I SD
10V
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
I
FM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
D =
Gate Pulse Width
Gate Pulse Period
--------------------------


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