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CSD19536KCS Fiches technique(PDF) 5 Page - Texas Instruments

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No de pièce CSD19536KCS
Description  CSD19536KCS, 100 V N-Channel NexFET Power MOSFET
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

CSD19536KCS Fiches technique(HTML) 5 Page - Texas Instruments

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0
25
50
75
100
125
150
175
−50
−25
0
25
50
75
100
125
150
175
200
TC - Case Temperature (ºC)
G001
0.1
1
10
100
1000
5000
0.1
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
10us
100us
1ms
10ms
DC
Single Pulse
Max RthetaJC = 0.4ºC/W
G001
10
100
1000
0.01
0.1
1
TAV - Time in Avalanche (mS)
TC = 25ºC
TC = 125ºC
G001
CSD19536KCS
www.ti.com
SLPS485 – JANUARY 2014
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
TEXT ADDED FOR SPACING
Figure 12. Maximum Drain Current vs Temperature
Copyright © 2014, Texas Instruments Incorporated
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