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TPD1052F Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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TPD1052F Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 12 page TPD1052F 2012-01-20 1 Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1052F High-side Power Switch for Motor, Solenoid and Lamp Drivers The TPD1052F is a monolithic power IC intended for high-side load switching applications. The input can be directly driven from CMOS or TTL logic (e.g., an MPU). The TPD1052F provides intelligent protection and diagnostic functions. Features A structure that incorporates Bi-CMOS control circuitry and a power MOSFET (DMOS) on a single chip. One side of the load can be grounded. Can be directly driven from a microprocessor. Overtemperature and load short-circuit (Overcurrent) protections are built in. Incorporates a diagnosis function that allows diagnosis output to be read externally at load short (Overcurrent), overtemperature. Low ON- resistance. : RDS(ON) = 0.8Ω (Max) @VDD = 12V, IO = 0.5A, Tch=25℃ Low supply current. : IDD = 10μA (Max), @VDD = 12V, VIN = 0V, Tch=25℃ Housed in the PS-8 package and supplied in embossed carrier tape. Pin Assignment (top view) Marking Note: That because of its MOS structure, this product is sensitive to static electricity. SON8-P-0303-0.65 Weight: 0.017g (typ.) VDD 1 N.C 2 IN 3 GND 4 8 OUT 7 N.C 6 DIAG 5 MASK Lot No. 1052F Part No. (or abbreviation code) ・ Note:● on the lower left of the marking indicates Pin 1 ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain |
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