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TPS2830PWPR Fiches technique(PDF) 5 Page - Texas Instruments

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No de pièce TPS2830PWPR
Description  FAST SYNCHRONOUS-BUCK MOSFET DRIVERS
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Fabricant  TI [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI - Texas Instruments

TPS2830PWPR Fiches technique(HTML) 5 Page - Texas Instruments

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TPS2830, TPS2831
FAST SYNCHRONOUSBUCK MOSFET DRIVERS
WITH DEADTIME CONTROL
SLVS196C − JANUARY1999 − REVISED JANUARY 2001
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
recommended operating conditions
MIN
NOM
MAX
UNIT
Supply voltage, VCC
4.5
15
V
Input voltage
BOOT to PGND
4.5
28
V
electrical characteristics over recommended operating virtual junction temperature range,
VCC = 6.5 V, ENABLE = High, CL = 3.3 nF (unless otherwise noted)
supply current
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VCC
Supply voltage range
4.5
15
V
VENABLE = LOW,
VCC =15 V
100
µA
V
Quiescent current
VENABLE = HIGH,
VCC =15 V
0.1
VCC
Quiescent current
VENABLE = HIGH,
BOOTLO grounded,
See Note 3
VCC =12 V,
fSWX = 200 kHz,
CHIGHDR = 50 pF, CLOWDR = 50 pF,
3
mA
NOTE 3: Ensured by design, not production tested.
output drivers
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
High-side sink
Duty cycle < 2%,
VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 4 V
0.7
1.1
High-side sink
(see Note 4)
Duty cycle < 2%,
tpw < 100 µs
(see Note 3)
VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 5 V
1.1
1.5
A
(see Note 4)
tpw < 100 µs
(see Note 3)
VBOOT – VBOOTLO = 12 V, VHIGHDR = 10.5 V
2
2.4
A
High-side
Duty cycle < 2%,
VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 0.5V
1.2
1.4
High-side
source
(see Note 4)
Duty cycle < 2%,
tpw < 100 µs
(see Note 3)
VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 1.5 V
1.3
1.6
A
Peak output-
source
(see Note 4)
tpw < 100 µs
(see Note 3)
VBOOT – VBOOTLO = 12 V, VHIGHDR = 1.5 V
2.3
2.7
A
Peak output-
current
Low-side sink
Duty cycle < 2%,
VCC = 4.5 V,
VLOWDR = 4 V
1.3
1.8
current
Low-side sink
(see Note 4)
Duty cycle < 2%,
tpw < 100 µs
(see Note 3)
VCC = 6.5 V,
VLOWDR = 5 V
2
2.5
A
(see Note 4)
tpw < 100 µs
(see Note 3)
VCC = 12 V,
VLOWDR = 10.5 V
3
3.5
A
Low-side
Duty cycle < 2%,
VCC = 4.5 V,
VLOWDR = 0.5V
1.4
1.7
Low-side
source
(see Note 4)
Duty cycle < 2%,
tpw < 100 µs
(see Note 3)
VCC = 6.5 V,
VLOWDR = 1.5 V
2
2.4
A
source
(see Note 4)
tpw < 100 µs
(see Note 3)
VCC = 12 V,
VLOWDR = 1.5 V
2.5
3
A
VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 0.5 V
5
High-side sink (see Note 4)
VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 0.5 V
5
High-side sink (see Note 4)
VBOOT – VBOOTLO = 12 V, VHIGHDR = 0.5 V
5
VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 4 V
75
High-side source (see Note 4)
VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 6 V
75
Output
High-side source (see Note 4)
VBOOT – VBOOTLO = 12 V, VHIGHDR =11.5 V
75
Output
resistance
VDRV = 4.5 V,
VLOWDR = 0.5 V
9
resistance
Low-side sink (see Note 4)
VDRV = 6.5 V
VLOWDR = 0.5 V
7.5
Low-side sink (see Note 4)
VDRV = 12 V,
VLOWDR = 0.5 V
6
VDRV = 4.5 V,
VLOWDR = 4 V
75
Low-side source (see Note 4)
VDRV = 6.5 V,
VLOWDR = 6 V
75
Low-side source (see Note 4)
VDRV = 12 V,
VLOWDR = 11.5 V
75
NOTES:
3. Ensured by design, not production tested.
4. The pullup/pulldown circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the
combined current from the bipolar and MOSFET transistors. The output resistance is the Rds(on) of the MOSFET transistor when
the voltage on the driver output is less than the saturation voltage of the bipolar transistor.


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