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TC4425A Fiches technique(PDF) 3 Page - Microchip Technology

No de pièce TC4425A
Description  3A Dual High-Speed Power MOSFET Drivers
Download  22 Pages
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Fabricant  MICROCHIP [Microchip Technology]
Site Internet  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

TC4425A Fiches technique(HTML) 3 Page - Microchip Technology

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© 2007 Microchip Technology Inc.
DS21998B-page 3
TC4423A/TC4424A/TC4425A
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage, IN A or IN B ..........(VDD + 0.3V) to (GND – 5V)
Package Power Dissipation (TA=50°C)
8L PDIP .......................................................................1.2W
8L SOIC.................................................................... 0.61W
16L SOIC.....................................................................1.1W
8L DFN .................................................................... Note 3
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS (NOTE 2)
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage
VIH
2.4
1.5
V
Logic ‘0’, Low Input Voltage
VIL
—1.3
0.8
V
Input Current
IIN
–1
1
µA
0V
≤ VIN ≤ VDD
Input Voltage
VIN
-5
VDD+0.3
V
Output
High Output Voltage
VOH
VDD – 0.025
V
DC Test
Low Output Voltage
VOL
0.025
V
DC Test
Output Resistance, High
ROH
—2.2
3.0
Ω
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—2.8
3.5
Ω
IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
4.5
A
10V
≤ VDD ≤18V (Note 2)
Latch-Up Protection With-
stand Reverse Current
IREV
>1.5
A
Duty cycle
≤ 2%, t ≤ 300 µsec.
Switching Time (Note 1)
Rise Time
tR
12
21
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Fall Time
tF
12
21
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Delay Time
tD1
40
48
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Delay Time
tD2
41
48
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Power Supply
Supply Voltage
VDD
4.5
18
V
Power Supply Current
IS
—1.0
2.0
mA
VIN = 3V (Both inputs)
IS
0.15
0.25
mA
VIN = 0V (Both inputs)
Note 1: Switching times ensured by design.
2: Tested during characterization, not production tested.
3: Package power dissipation is dependent on the copper pad area on the PCB.


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