BAW56M datasheet(6/15 Pages) NXP

No de pièce	BAW56M

Description	High-speed switching diodes

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Fabricant	NXP [NXP Semiconductors]

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6 / 15 page

BAV756S_BAW56_SER_5

Product data sheet

Rev. 05 — 26 November 2007

6 of 15

NXP Semiconductors

BAV756S; BAW56 series

High-speed switching diodes

(1) Tamb = 150 °C

(2) Tamb =85 °C

(3) Tamb =25 °C

(4) Tamb = −40 °C

Based on square wave currents.

Tj =25 °C; prior to surge

Fig 1.

Forward current as a function of forward

voltage; typical values

Fig 2.

Non-repetitive peak forward current as a

function of pulse duration; maximum values

(1) Tamb = 150 °C

(2) Tamb =85 °C

(3) Tamb =25 °C

(4) Tamb = −40 °C

f = 1 MHz; Tamb =25 °C

Fig 3.

Reverse current as a function of reverse

voltage; typical values

Fig 4.

Diode capacitance as a function of reverse

voltage; typical values

006aab109

VF (V)

0.2

1.4

1.0

0.6

1

10

102

103

IF

(mA)

10−1

(1)

(2)

(3)

(4)

mbg704

10

1

102

IFSM

(A)

10−1

tp (µs)

1104

103

10

102

006aab110

10−2

10−4

10−3

10

1

10−1

102

IR

(

µA)

10−5

VR (V)

0

100

80

40

60

20

(1)

(2)

(3)

(4)

025

VR (V)

2.5

0

0.5

mbh191

1.0

1.5

2.0

5

Cd

(pF)

10

15

20

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