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STP190N55LF3 Fiches technique(PDF) 4 Page - STMicroelectronics |
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STP190N55LF3 Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 12 page Electrical characteristics STP190N55LF3 4/12 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown Voltage ID = 250 µA, VGS= 0 55 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,Tc = 125 °C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±18 V ± 200 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 12.5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 30 A VGS= 5 V, ID= 30 A 2.9 3.3 3.7 4.5 m Ω m Ω Table 5. Dynamic Symbol Parameter Test conditions Min Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward transconductance VDS = 15 V, ID=60 A 250 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS=0 6200 1450 80 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD= 44 V, ID = 120 A VGS = 5 V (see Figure 16) 60 20 30 80 nC nC nC |
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