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STP5N52K3 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STP5N52K3
Description  N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP5N52K3 Fiches technique(HTML) 3 Page - STMicroelectronics

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STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Electrical ratings
Doc ID 16952 Rev 2
3/23
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220
D²PAK
DPAK
IPAK
TO-220FP
VDS
Drain- source voltage
525
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
4.4
4.4(1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100 °C
2.77
2.77 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
17.6
17.6(1)
A
PTOT
Total dissipation at TC = 25 °C
70
25
W
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max)
2.2
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
100
mJ
dv/dt(3)
3.
ISD ≤ 4.4 A, di/dt ≤ 100 A/µs,VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Peak diode recovery voltage slope
12
V/ns
VISO
Insulation withstand voltage (AC)
2500
V
TJ
Tstg
Operating junction temperature
Storage temperature
- 55 to 150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220 D²PAK TO-220FP IPAK DPAK
Rthj-case
Thermal resistance junction-case
max.
1.79
5
1.79
°C/W
Rthj-amb
Thermal resistance
junction-ambient max
62.5
100
°C/W
Rthj-pcb
Thermal resistance junction-pcb
max.
30
50
°C/W
TJ
Maximum lead temperature for
soldering purpose
300
300
°C/W


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