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2PD601BSL Fiches technique(PDF) 5 Page - NXP Semiconductors |
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2PD601BSL Fiches technique(HTML) 5 Page - NXP Semiconductors |
5 / 13 page 2PD601BRL_2PD601BSL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 28 June 2010 5 of 13 NXP Semiconductors 2PD601BRL; 2PD601BSL 50 V, 200 mA NPN general-purpose transistors VCE = 10 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb =25 °C Fig 3. 2PD601BRL: DC current gain as a function of collector current; typical values Fig 4. 2PD601BRL: Collector current as a function of collector-emitter voltage; typical values IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. 2PD601BRL: Collector-emitter saturation voltage as a function of collector current; typical values 006aac451 200 300 100 400 500 hFE 0 IC (mA) 10−1 103 102 110 (1) (3) (2) VCE (V) 010 8 46 2 006aac452 0.04 0.06 0.02 0.08 0.1 IC (A) 0 IB (mA) = 0.56 0.50 0.44 0.38 0.32 0.26 0.20 0.14 0.08 0.02 006aac453 IC (mA) 10−1 103 102 110 10−1 1 VCEsat (V) 10−2 (1) (2) (3) |
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