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ST62E25LT6 Fiches technique(PDF) 77 Page - STMicroelectronics |
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ST62E25LT6 Fiches technique(HTML) 77 Page - STMicroelectronics |
77 / 105 page ST6215C ST6225C 77/105 11.6 MEMORY CHARACTERISTICS Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified. 11.6.1 RAM and Hardware Registers 11.6.2 EPROM Program Memory Figure 55. EPROM Retention Time vs. Temperature Notes: 1. Minimum VDD supply voltage without losing data stored in RAM (in STOP mode or under RESET) or in hardware reg- isters (only in STOP mode). Guaranteed by construction, not tested in production. 2. Data based on reliability test results and monitored in production. For OTP devices, data retention and programmability must be guaranteed by a screening procedure. Refer to Application Note AN886. 3. The data retention time increases when the TA decreases, see Figure 55. Symbol Parameter Conditions Min Typ Max Unit VRM Data retention1) 0.7 V Symbol Parameter Conditions Min Typ Max Unit tret Data retention 2) TA=+55°C 3) 10 years -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 Temperature [°C] 0.1 1 10 100 1000 10000 100000 Retention time [Years] 1 |
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Description similaire - ST62E25LT6 |
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