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MTW6N100E Fiches technique(PDF) 6 Page - Motorola, Inc |
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MTW6N100E Fiches technique(HTML) 6 Page - Motorola, Inc |
6 / 8 page MTW6N100E 6 Motorola TMOS Power MOSFET Transistor Device Data SAFE OPERATING AREA 0.1 1.0 1000 100 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 100 10 0.1 10 100 µs 1 ms 10 ms dc 10 µs TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 1.0 t, TIME (s) Figure 13. Thermal Response Figure 14. Diode Reverse Recovery Waveform di/dt trr ta tp IS 0.25 IS TIME IS tb 25 150 0 1.0E–05 1.0E–04 1.0E–02 0.1 1.0 0.01 1.0E–03 1.0E–01 1.0E+00 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE D = 0.5 1.0E+01 700 VGS = 20 V SINGLE PULSE TC = 25°C 50 100 125 75 600 500 400 300 100 200 ID = 6 A R θJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) R θJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 |
Numéro de pièce similaire - MTW6N100E |
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Description similaire - MTW6N100E |
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