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STD30NE06LT4 Fiches technique(PDF) 2 Page - STMicroelectronics |
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STD30NE06LT4 Fiches technique(HTML) 2 Page - STMicroelectronics |
2 / 8 page Obsolete Product(s) - Obsolete Product(s) THERMAL DATA Rthj-pcb Rthj-amb Rthj-sink Tl Thermal Resistance Junction-PC Board Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 2.72 100 1.5 275 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 30 A EAS Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR, VDD = 25 V) 100 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 60 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating Tc = 125 oC 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ± 100 nA ON ( ∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 1 1.7 2.5 V RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 15 A VGS = 5 V ID = 15 A 0.022 0.025 0.028 0.030 Ω Ω ID(on) On State Drain Current VDS > ID(on) x RDS(on)max VGS = 10 V 30 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs ( ∗) Forward Transconductance VDS > ID(on) x RDS(on)max ID = 15 A 15 25 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V f = 1 MHz VGS = 0 V 2370 350 90 pF pF pF STD30NE06L 2/8 Obsolete Product(s) - Obsolete Product(s) |
Numéro de pièce similaire - STD30NE06LT4 |
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Description similaire - STD30NE06LT4 |
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