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Moteur de recherche de fiches techniques de composants électroniques |
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IRF8308MPBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRF8308MPBF Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF8308MPbF 2 www.irf.com
Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. Notes: Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.90 2.50 m Ω ––– 2.70 3.50 VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ΔVGS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -6.1 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 130 ––– ––– S Qg Total Gate Charge ––– 28 42 Qgs1 Pre-Vth Gate-to-Source Charge ––– 8.4 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 3.5 ––– nC Qgd Gate-to-Drain Charge ––– 8.2 ––– Qgodr Gate Charge Overdrive ––– 7.9 ––– See Fig. 15 Qsw Switch Charge (Qgs2 + Qgd) ––– 12 ––– Qoss Output Charge ––– 20 ––– nC RG Gate Resistance ––– 1.2 2.2 Ω td(on) Turn-On Delay Time ––– 11 ––– tr Rise Time ––– 19 ––– td(off) Turn-Off Delay Time ––– 23 ––– ns tf Fall Time ––– 16 ––– Ciss Input Capacitance ––– 4404 ––– Coss Output Capacitance ––– 885 ––– pF Crss Reverse Transfer Capacitance ––– 424 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 150 (Body Diode) A ISM Pulsed Source Current ––– ––– 212 (Body Diode) Ãg VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 20 30 ns Qrr Reverse Recovery Charge ––– 34 51 nC di/dt = 300A/μs i TJ = 25°C, IS = 21A, VGS = 0V i showing the integral reverse p-n junction diode. VGS = 4.5V, ID = 21A i VDS = VGS, ID = 100μA TJ = 25°C, IF =21A VGS = 4.5V ID = 21A VGS = 0V VDS = 15V ID = 21A VDD = 15V, VGS = 4.5V Ãi Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 27A i VGS = 20V VGS = -20V VDS = 24V, VGS = 0V VDS = 15V VDS = 24V, VGS = 0V, TJ = 125°C MOSFET symbol RG= 1.8 Ω VDS = 15V, ID =21A Conditions ƒ = 1.0MHz VDS = 16V, VGS = 0V |
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