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AM29F400AB-120SCB Fiches technique(PDF) 1 Page - Advanced Micro Devices |
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AM29F400AB-120SCB Fiches technique(HTML) 1 Page - Advanced Micro Devices |
1 / 35 page PRELIMINARY This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product without notice. Publication# 20380 Rev: B Amendment/0 Issue Date: April 1997 Am29F400AT/Am29F400AB 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 V ± 10% for read and write operations — Minimizes system level power requirements s Compatible with JEDEC-standards — Pinout and software compatible with single-power-supply flash — Superior inadvertent write protection s Package options — 44-pin SO — 48-pin TSOP s Minimum 100,000 write/erase cycles guaranteed s High performance — 60 ns maximum access time s Sector erase architecture — One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and seven 64 Kbytes — Any combination of sectors can be erased. Also supports full chip erase. s Sector protection — Hardware method that disables any combination of sectors from write or erase operations. Implemented using standard PROM programming equipment. s Embedded Erase ™ Algorithms — Automatically preprograms and erases the chip or any sector s Embedded Program ™ Algorithms — Automatically programs and verifies data at specified address s Data Polling and Toggle Bit feature for detection of program or erase cycle completion s Ready/Busy output (RY/BY) — Hardware method for detection of program or erase cycle completion s Erase Suspend/Resume — Supports reading data from a sector not being erased s Low power consumption — 20 mA typical active read current for Byte Mode — 28 mA typical active read current for Word Mode — 30 mA typical program/erase current s Enhanced power management for standby mode —1 µA typical standby current s Boot Code Sector Architecture — T = Top sector — B = Bottom sector s Hardware RESET pin — Resets internal state machine to the read mode GENERAL DESCRIPTION The Am29F400A is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each or 256 Kwords of 16 bits each. The 4 Mbits of data is divided into 11 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbytes, for flexible erase capability. The 8 bits of data will appear on DQ0–DQ7 or 16 bits on DQ0–DQ15. The Am29F400A is offered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. 12.0 Volt VPP is not required for program or erase operations. The device can also be re- programmed in standard EPROM programmers. The standard Am29F400A offers access times of 60 ns, 70 ns, 90 ns, 120 ns and 150 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has sepa- rate chip enable (CE), write enable (WE) and output enable (OE) controls. The Am29F400A is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register con- tents serve as input to an internal state-machine which controls the erase and programming circuitry. |
Numéro de pièce similaire - AM29F400AB-120SCB |
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Description similaire - AM29F400AB-120SCB |
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