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AM29F100T-120DTE Fiches technique(PDF) 4 Page - Advanced Micro Devices |
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AM29F100T-120DTE Fiches technique(HTML) 4 Page - Advanced Micro Devices |
4 / 8 page 4 Am29F100 Known Good Die SU PP L E ME NT PAD DESCRIPTION Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment. Pad Signal Pad Center (mils) Pad Center (millimeters) X YXY 1VCC 0.0 0.0 0.00 0.00 2DQ4 –16.5 0.6 –0.42 0.02 3 DQ12 –27.0 0.6 –0.69 0.02 4 DQ5 –37.8 0.6 –0.96 0.02 5 DQ13 –48.4 0.6 –1.23 0.02 6 DQ6 –59.1 0.6 –1.50 0.02 7 DQ14 –69.7 0.6 –1.77 0.02 8 NC –80.5 0.6 –2.04 0.02 9 DQ7 –91.0 0.6 –2.31 0.02 10 NC –103 0.6 –2.62 0.02 11 NC –109.6 0.6 –2.78 0.02 12 DQ15 –114.7 –20.6 –2.91 –0.52 13 VSS –114.7 –29.5 –2.91 –0.75 14 BYTE# –113.3 –37.0 –2.88 –0.94 15 A15 –110.2 –121.9 –2.80 –3.10 16 A14 –100.0 –121.9 –2.54 –3.10 17 A13 –90.0 –121.9 –2.29 –3.10 18 A12 –79.9 –121.9 –2.03 –3.10 19 A11 –69.9 –121.9 –1.78 –3.10 20 A10 –59.9 –121.9 –1.52 –3.10 21 A9 –49.9 –121.9 –1.27 –3.10 22 A8 –39.9 –121.9 –1.01 –3.10 23 WE# –29.9 –121.9 –0.76 –3.10 24 RESET# 47.8 –121.9 1.21 –3.10 25 RY/BY# 61.2 –121.9 1.55 –3.10 26 A7 71.1 –121.9 1.81 –3.10 27 A6 81.1 –121.9 2.06 –3.10 28 A5 91.0 –121.9 2.31 –3.10 29 A4 101.1 –121.9 2.57 –3.10 30 A3 114.5 –121.9 2.91 –3.10 31 A2 121.4 –121.9 3.08 –3.10 32 A1 131.4 –121.9 3.34 –3.10 33 A0 134.5 –41.1 3.42 –1.04 34 CE# 134.5 –32.7 3.42 –0.83 35 VSS 134.5 –17.6 3.42 –0.45 36 OE# 130.7 0.6 3.32 0.02 37 NC 120.9 0.6 3.07 0.02 38 NC 114.2 0.6 2.90 0.02 39 NC 107.5 0.6 2.73 0.02 40 DQ0 91.6 0.6 2.33 0.02 41 DQ8 80.2 0.6 2.04 0.02 42 DQ1 69.4 0.6 1.76 0.02 43 DQ9 58.9 0.6 1.50 0.02 44 DQ2 48.1 0.6 1.22 0.02 45 DQ10 37.5 0.6 0.95 0.02 46 DQ3 26.7 0.6 0.68 0.02 47 DQ11 16.2 0.6 0.41 0.02 |
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