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BAS316115 Fiches technique(PDF) 6 Page - NXP Semiconductors |
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BAS316115 Fiches technique(HTML) 6 Page - NXP Semiconductors |
6 / 20 page BAS16_SER_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 25 August 2008 6 of 20 NXP Semiconductors BAS16 series High-speed switching diodes [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB with 60 µm copper strip line. [3] Reflow soldering is the only recommended soldering method. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [5] Single diode loaded. [6] Soldering point of cathode tab. [7] Soldering points at pins 4, 5 and 6. 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. [3] When switched from IF = 10 mA; tr =20ns. Rth(j-sp) thermal resistance from junction to solder point BAS16H [6] --70 K/W BAS16J [6] --55 K/W BAS16T - - 350 K/W BAS16VY [5][7] - - 260 K/W BAS316 [6] - - 150 K/W BAS516 [6] - - 120 K/W Table 7. Thermal characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Table 8. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VF forward voltage [1] IF = 1 mA - - 715 mV IF = 10 mA - - 855 mV IF = 50 mA --1 V IF = 150 mA - - 1.25 V IR reverse current VR = 25 V --30 nA VR = 80 V - - 0.5 µA VR = 25 V; Tj = 150 °C --30 µA VR = 80 V; Tj = 150 °C --50 µA Cd diode capacitance f = 1 MHz; VR =0V BAS16; BAS16H; BAS16J; BAS16L; BAS16T; BAS16VV; BAS16VY; BAS16W; BAS316 - - 1.5 pF BAS516 - - 1 pF trr reverse recovery time [2] --4 ns VFR forward recovery voltage [3] - - 1.75 V |
Numéro de pièce similaire - BAS316115 |
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Description similaire - BAS316115 |
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