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FQA11N90F109 Datasheet(Fiches technique) 1 Page - Fairchild Semiconductor

Numéro de pièce FQA11N90F109
Description  N-Channel QFET® MOSFET 900 V, 11.4 A, 960
Télécharger  8 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQA11N90F109 Datasheet(HTML) 1 Page - Fairchild Semiconductor

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November 2013
©2006 Fairchild Semiconductor Corporation
FQA11N90_F109 Rev. C1
www.fairchildsemi.com
1
MOSFET Maximum Ratings T
C = 25
oC unless otherwise noted.
Thermal Characteristics
Symbol
Parameter
FQA11N90_F109
Unit
VDSS
Drain to Source Voltage
900
V
ID
Drain Current
- Continuous (TC = 25oC)
11.4
A
- Continuous (TC = 100oC)
7.2
A
IDM
Drain Current
- Pulsed
(Note 1)
45.6
A
VGSS
Gate to Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
1000
mJ
IAR
Avalanche Current
(Note 1)
11.4
A
EAR
Repetitive Avalanche Energy
(Note 1)
30
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.0
V/ns
PD
Power Dissipation
(TC = 25oC)
300
W
- Derate above 25oC
2.38
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°C
Symbol
Parameter
FQA11N90_F109
Unit
RθJC
Thermal Resistance, Junction to Case, Max
0.42
oC/W
RθJA
Thermal Resistance, Junction to Ambient, Max
40
oC/W
FQA11N90_F109
N-Channel QFET® MOSFET
900 V, 11.4 A, 960 m
Ω
Features
• 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V,
ID = 5.7 A
• Low Gate Charge (Typ. 72 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested
• RoHS compliant
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable
for switched mode power supplies, active power factor
correction (PFC), and electronic lamp ballasts.
TO-3PN
G
D
S
G
S
D


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