PZT4401 datasheet(1/1 Pages) WINNERJOIN

No de pièce	PZT4401

Description	TRANSISTOR (NPN)

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Fabricant	WINNERJOIN [SHENZHEN YONGERJIA INDUSTRY CO.,LTD]

Site Internet	http://www.wej.cn

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WEJ

ELECTRONIC

CO.,LTD

PZT4401 TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

1

W (Tamb=25

℃)

Collector current

ICM:

0.6

A

Collector-base voltage

V(BR)CBO: 60

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=100µA,IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=1mA,IB=0

40

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA,IC=0

6

V

Collector cut-off current

ICBO

VCB=60V,IE=0

50

nA

Emitter cut-off current

IEBO

VEB=6V,IC=0

50

nA

hFE(1)

VCE=1V,IC=0.1mA

20

hFE(2)

VCE=1V,IC=1mA

40

hFE(3)

VCE=1V,IC=10mA

80

hFE(4)

VCE=1V,IC=150mA

100

300

DC current gain

hFE(5)

VCE=2V,IC=500mA

40

VCE(sat)

IC=150mA,IB=15mA

0.4

V

Collector-emitter saturation voltage

VCE(sat)

IC=500mA,IB=50mA

0.75

V

VBE(sat)

IC=150mA,IB=15mA

0.95

V

Base-emitter saturation voltage

VBE(sat)

IC=500mA,IB=50mA

1.2

V

Transition frequency

fT

VCE=10V,IC=20mA,f=100MHz

200

MHz

Collector capacitance

CC

VCB=5V,IE=0,f=1MHz

8

pF

Emitter capacitance

CE

VEB=0.5V,IC=0,f=1MHz

30

pF

Delay time

td

15

nS

Rise time

tr

20

nS

Storage time

tS

200

nS

Fall time

tf

VCC=29.5V, IC=150mA

VBB=3.5V,IB1=- IB2=15mA

60

nS

SOT-223

1. BASE

2. COLLECTOR

3. EMITTER

PZT4401

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

RoHS

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