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KTB1366 Datasheet(Fiches technique) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

Numéro de pièce KTB1366
Description  TRANSISTOR (PNP)
Télécharger  1 Pages
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Fabricant  WINNERJOIN [SHENZHEN YONGERJIA INDUSTRY CO.,LTD]
Site Internet  http://www.wej.cn
Logo WINNERJOIN - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

KTB1366 Datasheet(HTML) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

  KTB1366 Datasheet HTML 1Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD  
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WEJ
ELECTRONIC
CO.,LTD
KTB1366 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM:
2
W (Tamb=25
℃)
Collector current
ICM:
-3
A
Collector-base voltage
V(BR)CBO:
-60
V
Operating and storage junction temperature range
TJ, Tstg: -55
℃ to +150℃
ELECTRICAL
CHARACTERISTICS (Tamb=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=
-1mA, IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=
-50mA, IB=0
-60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-1mA, IC=0
-7
V
Collector cut-off current
ICBO
VCB=-60V, IE=0
-100
µA
Emitter cut-off current
IEBO
VEB=-7V, IC=0
-100
µA
hFE(1)
VCE=-5V, IC=-0.5A
60
200
DC current gain
hFE(2)
VCE=-5V, IC=-3A
20
Collector-emitter saturation voltage
VCE(sat)
IC=-2A, IB=-0.2A
-1
V
Base-emitter voltage
VBE
VCE=-5V, IC=-0.5A
-1
V
Transition frequency
fT
VCE=-5V, IC=-0.5A
9
MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
150
pF
Fall time
tf
0.5
µs
Storage time
ts
IC=-2A, IB1=-IB2=-0.2A
VCC=-30V
1.7
µs
CLASSIFICATION OF
hFE(1)
Rank
O
Y
Range
60-120
100-200
Marking
1 2 3
TO-220F
1. BASE
2. COLLECTOR
3. EMITTER
KTB1366
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
RoHS


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